/ COSMOS I-1201 / Canon ANELVA COSMOS I-1201 (PVD, for solder bump) / /
Delivery Ship within 5 DAYS after payment received
Warranty No warranty
Condition OEM: Used Working, Untested
1 available
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- Process-
- Wafer size12inch(300mm)
- Delivery ServiceEconomy service (more than 10 business days)
- Payment method
- Item description:
No. Item HxWxL (cm) 1 Main Body 2000x1800x1900 2 Load/Unload Unit 2000x1300x1850 3 System Rack 2300x900x550 4 LCD Monitor Rack 1270x680x400 5 Controller Rack 2100x1400x1350 6 AC Power Rack 2000x1200x600 7 Cryo Rack
1. ANELVA CRYOPMP COMPRESSOR UNIT-875CA(2 units) Label Only1800x700x650 8 Chiller 1450x700x650 9 DC Rack 2700x1050x550 10 RF Rack 2000x1050x550 11 Main UPS Power Supply 900x900x550 12 Dry Pump Rack
1. EBARA DRY PUMP AA10N (Upper Stage) LAbel Only
2. EBARA DRY PUMP AA30 (Lower Stage) Label Only1500x1200x1320 13 Cryo He Hose 1300x1100x600 14 Process CH-A (SLA-ICP) 1900x1000x1150 15 Process CH-B (Cooling+Gate Bulb 3 Sets) 1100x1100x1100 16 Process CH-C (Unused Main PVD Specifications) 1900x1000x1150 17 Process Process CH-D (Cu Process) 1900x1000x1150 18 Process CH-E (Ti Proces) 1900x1000x1150 19 Process CH-F (Heat Process) 1200x1100x1100 20 For Maintenance Crane-1 Cover-1 2400x1100 21 For Maintenance Crane-2 (foundation)
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3. CH relay BOX 1022-39070C REV.03
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1. Canon Anelva Model: Cosmos 300PVD 2. Voltage: 200VAC, 3Phase/200VAC, 3Phase 3. Wiring Config. 3Wire+Ground, Freq. : 50Hz/60Hz 4. Main Breaker: 175A/225A, Interrupt Current: 10.0A/10.0A - Item spec:
- CANON ANELVA IC7300 (I 1201), end model (Vintage), PVD SystemChambersDegasCoolSLA-ICPCollimated CO (ESC) (2) STD-PVD (ESC)2002 vintage.AbstractA film forming apparatus is provided with a shutter containing section connected to a processing chamber via an opening and containing a shutter in a retracted state into a gas discharge chamber, and a shield member for covering the gas discharge opening of the gas discharge chamber and formed around the opening of the shutter containing section. The shield member is provided with a first gas discharge path communicating with the gas discharge opening of the gas discharge chamber and located at a predetermined height between the opening of the shutter containing section and a film forming means.
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